sfh 325 ? sfh 325 fa npn-silizium-fototransi stor im smt sideled ? -geh?use ? silicon npn phototransistor in smt sideled ? -package ? lead (pb) free produc t - rohs compliant sfh 325 sfh 325 fa ? gem?? os-pcn-2012-008-a/ acc ording to os-pcn-2012-008-a 2013-01-16 1 wesentliche merkmale ? speziell geeignet fr anwendungen im bereich von 450 nm bis 1120 nm (sfh 325) und bei 750 nm bis 1120 nm (sfh 325 fa) ? hohe linearit?t ? p-lcc-2 geh?use ? gruppiert lieferbar anwendungen ? miniaturlichtschranken fr gleich- und wechsellichtbetrieb ? industrieelektronik ? ?messen/steuern/regeln? typ ? type bestellnummer ? ordering code fotostrom , (e e =0,1mw/cm 2 , ? =950nm v ce = 5 v) ? photocurrent ? ipce ( ? a) sfh 325 1) 1) gruppierung erfolgt in halbgruppen (s iehe seite 4), verpackungseinheit = nu r eine halbgruppe / binning in half groups (see page 4), packing unit = only one half group q65110a2486 > 16 sfh 325-3 1) Q65110A2488 25-50 sfh 325-3/-4 1) q65110a2491 25-80 sfh 325-4 1) q65110a2484 40-80 sfh 325 fa 1) q65110a2487 > 16 sfh 325 fa-3 1) q65110a2482 25-50 sfh 325 fa-3/-4 1) q65110a2490 25-80 sfh 325 fa-4 1) q65110a2485 40-80 features ? especially suitable for applications from 450 nm to 1120 nm (sfh 325) and from 750 nm to 1120 nm (sfh 325 fa) ? high linearity ? p-lcc-2 package ? available in groups applications ? miniature photointerrupters ? industrial electronics ? for control and drive circuits
2013-01-16 2 sfh 325, sfh 325 fa grenzwerte ? maximum ratings bezeichnung ? parameter symbol ? symbol wert ? value einheit ? unit betriebs- und lagertemperatur ? operating and storage temperature range t op ; t stg ? 40 ? + 100 ? c kollektor-emitterspannung ? collector-emitter voltage v ce 35 v kollektorstrom ? collector current i c 15 ma kollektorspitzenstrom, ???? 10 ?? s ? collector surge current i cs 75 ma verlustleistung, t a = 25 ? c ? total power dissipation p tot 165 mw w?rmewiderstand fr montage auf pc-board ? thermal resistance for mounting on pcb r thja 450 k/w
sfh 325, sfh 325 fa 2013-01-16 3 kennwerte ( t a = 25 ? c, ? = 950 nm) ? characteristics bezeichnung ? parameter symbol ? symbol wert value einheit ? unit sfh 325 sfh 325 fa wellenl?nge der max. fotoempfindlichkeit ? wavelength of max. sensitivity ? s max 980 980 nm spektraler bereich der fotoempfindlichkeit ? s = 10% von s max ? spectral range of sensitivity ? s = 10% of s max ? 450 ? 1120 750 ? 1120 nm bestrahlungsempfindliche fl?che ???? 220 ?? m) ? radiant sensitive area a 0.038 0.038 mm 2 abmessung der chipfl?che ? dimensions of chip area l ? b ? l ? w 0.45 ? 0.45 0.45 ? 0.45 mm ? mm halbwinkel ? half angle ? ? 60 ? 60 grad ? deg. kapazit?t, v ce = 0 v, f = 1 mhz, e = 0 ? capacitance c ce 5.0 5.0 pf dunkelstrom ? dark current ? v ce = 20 v, e = 0 i ceo 1 ( ?? 50) 1 ( ?? 50) na
2013-01-16 4 sfh 325, sfh 325 fa directional characteristics s rel = f ( ? ) die fototransistoren werden nach ihrer fotoemp findlichkeit gruppiert und mit arabischen ziffern gekennzeichnet. ? the phototransistors are grouped according to thei r spectral sensitivity and distinguished by arabian figures. bezeichnung ? parameter symbol ? symbol wert value einheit ? unit -2a -2b -3a -3b -4a -4b fotostrom, ???? 950 nm ? photocurrent ? e e = 0.1 mw/cm 2 , v ce = 5 v ? sfh 325: ? e v = 1000 ix, ? normlicht/standard light a, ? v ce = 5 v ? i pce min ? i pce max ? ? i pce 16 25 360 20 32 450 25 40 570 32 50 720 40 63 900 50 80 1140 ? ? a ? ? a ? ? ? a anstiegszeit/abfallzeit ? rise and fall time ? i c = 1 ma, v cc = 5 v, r l = 1 k ? t r , t f 6 6 7 7 8 8 ? s kollektor-emitter-s?ttigungsspannung ? collector-emitter saturation voltage ? i c = i pcemin 1) ? 0.3, ? e e = 0.1 mw/cm 2 v cesat 150 150 150 150 150 150 mv 1) i pcemin ist der minimale fotostro m der jeweiligen gruppe. 1) i pcemin is the min. photocurrent of the specified group. ohf01402 90 80 70 60 50 40 30 20 10 20 40 60 80 100 120 0.4 0.6 0.8 1.0 ? 0.2 0.4 0.6 0.8 1.0 100 0 0 0
sfh 325, sfh 325 fa 2013-01-16 5 relative spectral sensitivity , sfh 325 s rel = f ( ? ) total power dissipation ? p tot = f ( t a ) dark current ? i ceo = f ( t a ), v ce = 5 v , e = 0 0 ohf00207 400 s rel nm % 500 600 700 800 900 1100 10 20 30 40 50 60 70 80 100 ohf00871 tot p 0 0 40 80 120 160 mw 200 20 40 60 80 ?c 100 t a t ohf01530 a ceo -1 10 10 0 10 1 10 2 10 3 -25 na 0 25 50 75 100 ?c relative spectral sensitivity , sfh 325 fa s rel = f ( ? ) photocurrent ? i pce = f ( v ce ), e e = parameter capacitance ? c ce = f ( v ce ), f = 1 mhz, e = 0 ohf00468 0 rel s 400 20 40 60 80 % 100 nm 500 600 700 800 900 1100 v ohf01529 ce pce 0 0 10 10 -2 10 -1 ma v 5 10 15 20 25 30 35 mw cm 2 0.1 0.25 2 cm mw 0.5 2 cm mw 1 2 cm mw v ohf01528 ce -2 10 ce c 10 -1 10 0 10 1 10 2 0 v 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 pf photocurrent ? i pce = f ( e e ), v ce = 5 v dark current ? i ceo = f ( v ce ), e = 0 photocurrent ? i pce / i pce25 o = f ( t a ), v ce = 5 v e ohf01924 e pce 10 -1 10 -3 10 -2 10 0 10 0 10 1 10 2 10 3 2 mw/cm 2 3 4 a v ohf01527 ce ceo -3 10 10 -2 10 -1 10 0 10 1 0 5 10 15 20 25 30 35 v na t ohf01524 a 0 -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 pce pce 25 c
2013-01-16 6 sfh 325, sfh 325 fa ma?zeichnung ? package outlines ma?e in mm (inch) / dimensions in mm (inch). gply6068 (r1) collector marking collector emitter (2.4 (0.094)) 2.8 (0.110) 2.4 (0.094) 4.2 (0.165) 3.8 (0.150) 0.9 (0.035) 1.1 (0.043) spacing 2.54 (0.100) 0.7 (0.028) (2.85 (0.112)) (1.4 (0.055)) (0.3 (0.012)) 3.4 (0.134) 3.8 (0.150) 3.8 (0.150) 4.2 (0.165) (2.9 (0.114))
sfh 325, sfh 325 fa 2013-01-16 7 empfohlenes l?tpaddesign ? recommended solderpad design ma?e in mm (inch) / dimensions in mm (inch). 3.7 (0.146) 1.2 (0.047) 3.0 (0.118) cu-area > 16 mm cu-fl?che > 16 mm paddesign for improved heat dissipation w?rmeableitung fr verbesserte padgeometrie l?tstopplack solder resist ohlpy965 2 2
2013-01-16 8 sfh 325, sfh 325 fa l?tbedingungen vorbehandlung nach jedec level 2 ? soldering conditions preconditioning acc. to jedec level 2 ? reflow l?tprofil fr bleifreies l?ten (nach j-std-020d.01) ? reflow soldering profile for lead free soldering (acc. to j-std-020 d.01 ) profileigenschaften ? profile feature bleifreier aufbau / pb-free assembly (snagcu) empfehlung / recommendation grenzwerte / max. ratings aufheizrate zum vorw?rmen* ) / ? ramp-up rate to preheat* ) 25 c to 150 c 2 k / s 3 k / s zeit t s von t smin bis t smax / ? time t s from t smin to t smax 150 c to 200 c 100 s min. 60 s max. 120 s aufheizrate zur spitzentemperatur* ) / ? ramp-up rate to peak* ) 180 c to t p 2 k / s 3 k / s liquidustemperatur t l / ? liquidus temperature t l 217 c zeit t l ber t l / time t l above t l 80 s max. 100 s spitzentemperatur t p / peak temperature t p 245 c max. 250 c verweilzeit t p innerhalb des spezifizierten spitzentemperaturbereichs t p - 5 k / time t p within the specified peak temperature range t p - 5 k 20 s min. 10 s max. 30 s abkhlrate* ) / ramp-down rate* ) t p to 100 c 3 k / s 4 k / s maximum zeitspanne von 25 c bis zur spitzentemperatur / ? time from 25 c to peak temperature max. 8 min. alle temperaturen beziehen sich auf die bauteilmitte, jeweils auf der bauteiloberseite gemessen / all temperatures refer to the center of the package, measured on the top of the package * steigungsberechnung ? t/ ? t: ? t max. 5 s; erfllt ber den gesamten temperaturbereich / slope calculation ? t/ ? t: ? t max. 5 s; fulfillment for the whole t-range 0 0 s oha04525 50 100 150 200 250 3 00 50 100 150 200 250 3 00 t t ?c s t t p t t p 240 ?c 217 ?c 245 ?c 25 ?c l
sfh 325, sfh 325 fa 2013-01-16 9 wellenl?ten (ttw) (nach cecc 00802) ? ttw soldering (acc. to cecc 00802) ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves
2013-01-16 10 sfh 325, sfh 325 fa ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? published by ? osram opto semico nductors gmbh wernerwerkstrasse 2, d-93049 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. ? terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered.
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